<?xml version="1.0" encoding="utf-8" standalone="yes"?><rss version="2.0" xmlns:atom="http://www.w3.org/2005/Atom"><channel><title>Electronics on Américo Dias</title><link>https://americo.dias.pt/categories/electronics/</link><description>Recent content in Electronics on Américo Dias</description><generator>Hugo</generator><language>en</language><lastBuildDate>Thu, 30 Apr 2026 15:05:09 +0000</lastBuildDate><atom:link href="https://americo.dias.pt/categories/electronics/index.xml" rel="self" type="application/rss+xml"/><item><title>Radio-Frequency Transmitter for Subcutaneous Biomedical Implants</title><link>https://americo.dias.pt/posts/thesis/</link><pubDate>Sun, 24 Jun 2018 08:30:00 +0100</pubDate><guid>https://americo.dias.pt/posts/thesis/</guid><description>&lt;!--
*[A/D]: Analog-to-digital converter
*[AWGN]: Additive white Gaussian noise
*[BPSK]: Binary phase shift keying
*[CMOS]: Complementary metal–oxide–semiconductor
*[DRC]: Design rule check
*[DSO]: Digital sampling oscilloscope
*[DSSS]: Direct-sequence spread spectrum
*[EIRP]: Equivalent isotropically radiated power
*[FCC]: Federal Communications Commission
*[FF]: Fast NMOS and fast PMOS
*[FS]: Fast NMOS and slow PMOS
*[FSK]: Frequency-shift keying
*[GPS]: Global positioning system
*[IFN]: Integrate-and-fire neuron
*[IR-UWB]: Impulse-radio ultra-wideband
*[LNA]: Low-noise amplifier
*[LTCC]: Low-temperature co-fired ceramic
*[LVS]: Layout-versus-schematic
*[MB-OFDM]: Multi band orthogonal frequency-division multiplexing
*[MB-UWB]: Multi-band ultra-wideband
*[MOSFET]: Metal–oxide–semiconductor field-effect transistor
*[MSK]: Minimum-shift keying
*[NMOS]: N-channel metal–oxide–semiconductor transistor
*[OFDM]: Orthogonal frequency-division multiplexing
*[OOK]: On-off keying
*[PA]: Power amplifier
*[PAE]: Power added efficiency
*[PAM]: Pulse amplitude modulation
*[PEX]: Parasitic extraction
*[PHY]: Physical layer
*[PMOS]: P-channel metal–oxide–semiconductor transistor
*[PN]: Pseudo noise
*[PPM]: Pulse position modulation
*[PRF]: Pulse repetition frequency
*[PSD]: Power spectral density
*[RF]: Radio-frequency
*[SF]: Slow NMOS and fast PMOS
*[SNR]: Signal-to-noise ratio
*[SS]: Slow NMOS and slow NMOS
*[TSMC]: Taiwan Semiconductor Manufacturing Company
*[TT]: Typical NMOS and typical PMOS
*[UMC]: United Microelectronics Corporation
*[UWB]: Ultra-wideband
*[VCO]: Voltage controlled oscillator
*[IoT]: Internet of Things
--&gt;
&lt;h2 id="about"&gt;About this edition&lt;/h2&gt;
&lt;p&gt;Publishing a web-edition of my master&amp;rsquo;s thesis report was a project that I kept
delaying over the last years. Finally I had time to work on it. This report was
delivered almost 7 years ago - at the time of writing - in June 2010.&lt;/p&gt;</description></item><item><title>Phase Locked Loop Simulator in SystemC-AMS</title><link>https://americo.dias.pt/posts/pll/</link><pubDate>Fri, 02 Mar 2018 08:30:00 +0100</pubDate><guid>https://americo.dias.pt/posts/pll/</guid><description>&lt;h2 id="1-introduction"&gt;1. Introduction&lt;/h2&gt;
&lt;p&gt;When I started to learn SystemC-AMS one of the first circuits I decided to
implement was a Phase Locked Loop. The reason for this is because I have had an
experience &lt;a href="https://web.archive.org/web/20160523165857/http://usgroup.eu/activities/projects/wireless_front-end/" target="_blank" rel="noopener noreffer "&gt;simulating a 2.4GHz
PLL&lt;/a&gt;
while I was &lt;a href="https://web.archive.org/web/20150715000110/http://usgroup.eu:80/blog/author/adias/" target="_blank" rel="noopener noreffer "&gt;member of the Microelectronics Student&amp;rsquo;s
Group&lt;/a&gt;,
and I realized how difficult is to simulate such circuit, specially when the
output and the reference frequency are several orders of magnitude apart. The
simulator has to use a small time-step to accommodate the higher frequency but
at the same time, the PLL will take a relatively long time to lock and reach the
steady state.&lt;/p&gt;</description></item></channel></rss>